Granty
> Radiation stability of SiC and SiC based detectors against high energy heavy ion irradiation effects. High energy heavy ion irradiation effects in SiC and SiC based detectors
Radiation stability of SiC and SiC based detectors against high energy heavy ion irradiation effects. High energy heavy ion irradiation effects in SiC and SiC based detectors
Projekt
číslo
04-5-1076
trvání
1.1.2016 - 31.12.2016
řešitel
Foral Štěpán
| Fakulta elektrotechniky a komunikačních technologií VUT v Brně
|
Skuratov V.A.
| SÚJV
|